npn epitaxial ty transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 100 ma p c collector power dissipation 200 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb =60v, i e =0 0.1 a i ebo emitter cut-off current v eb =5v, i c =0 0.1 a h fe dc current gain v ce =6v, i c =1ma 90 200 600 v ce (sat) collector-emitter saturation voltage i c =100ma, i b =10ma 0.15 0.3 v v be (sat) base-emitter saturation voltage i c =100ma, i b =10ma 0.86 1.0 v v be (on) base-emitter on voltage v ce =6v, i c =1ma 0.55 0.62 0.65 v f t current gain bandwidth product v ce =6v, i c =10ma 250 mhz c ob output capacitance v cb =6v, i e =0, f=1mhz 3 pf classification o y g l h fe 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 1. base 2. emitter 3. collector ksc1623 low frequency amplifier & high frequency osc. ? complement to ksa812 c1o marking h fe grade sot-23 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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